Controlling gate formation by removing dummy gate structures

Details Controlling gate formation by removing dummy gate structures Controlling gate formation by removing dummy gate structures

2004-12-15

2008-10-07

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Diffusing a dopant

C438S005000, C438S531000, C257S041000, C257S281000, C257S421000, C257SE21444, C257SE21453

Reexamination Certificate

active

07432179

ABSTRACT:
A method of forming semiconductor structures comprises following steps. A gate dielectric layer is formed over a substrate in an active region. A gate electrode layer is formed over the gate dielectric layer. A first photo resist is formed over the gate electrode layer. The gate electrode layer and dielectric layer are etched thereby forming gate structures and dummy patterns, wherein at least one of the dummy patterns has at least a portion in the active region. The first photo resist is removed. A second photo resist is formed covering the gate structures. The dummy patterns unprotected by the second photo resist are removed. The second photo resist is then removed.

REFERENCES:
patent: 5686338 (1997-11-01), Liu
patent: 5923969 (1999-07-01), Oyamatsu
patent: 6074938 (2000-06-01), Asamura
patent: 6103592 (2000-08-01), Levy et al.
patent: 6153919 (2000-11-01), Sjödin et al.
patent: 6287904 (2001-09-01), Lee et al.
patent: 6461906 (2002-10-01), Lung
patent: 6492073 (2002-12-01), Lin et al.
patent: 2002/0160590 (2002-10-01), Hashimoto et al.
patent: 2002-270538 (2002-09-01), None

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