Contaminant reduction improvements for plasma etch chambers

Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – With microwave gas energizing means

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Details

20429807, 20429832, 20429833, 118723E, 118715, C23F 102, C23C 1434, C23C 1600

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active

057164843

ABSTRACT:
A plasma etch chamber includes a modified focus ring which is used in conjunction with chamber pressure throttling to eject contaminants in the focus ring away from the substrate just before the etching cycle is completed. Additionally, process gas is directed against the inner wall of the chamber to create a swirling flow of plasma within the chamber and thus disturb any contaminant-generating field adjacent the chamber wall. A process gas, or a non-reactive purge gas, may also be supplied from a diffuser atop the cathode, to direct a gas layer along the top and sides of the chamber to reduce contaminant build-up on the chamber surfaces.

REFERENCES:
patent: 3608519 (1971-09-01), Richardson et al.
patent: 4245154 (1981-01-01), Uehara et al.
patent: 4252595 (1981-02-01), Yamamoto et al.
patent: 4282077 (1981-08-01), Reavill
patent: 4298443 (1981-11-01), Maydan et al.
patent: 4345968 (1982-08-01), Coe
patent: 4358686 (1982-11-01), Kinoshita
patent: 4512283 (1985-04-01), Bonifield et al.
patent: 4563367 (1986-01-01), Sherman
patent: 4612432 (1986-09-01), Sharp-Geisler
patent: 4632719 (1986-12-01), Chow et al.
patent: 4786352 (1988-11-01), Benzing
patent: 4842683 (1989-06-01), Cheng et al.
patent: 4960610 (1990-10-01), Krogh
patent: 5049251 (1991-09-01), Inoue
patent: 5221425 (1993-06-01), Blanchard et al.
patent: 5458725 (1995-10-01), Granger et al.
T. Tasuo, "Dry Etching of A1-Si-Cu Alloy," vol. 13, No. 396, (E-815), 4 Sep. 1989 & JP-A-01 140 725 (Matsushita Electric Ind. Co. Ltd.) 1 Jun. 1989 abstract.
F. Yasuhiro, "Plasma Etching Device," vol. 12, No. 111, (E-598), 8 Apr. 1988 & JP-A-62 241 336 (NEC Kyushu Ltd.) 22 Oct. 1987 abstract.
Francis, Terry, "Controlling Process Equipment Contamination in the '90's," Semiconductor International Oct. 1993, 62: 62-66.

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