Contact process and structure for a semiconductor device

Details Contact process and structure for a semiconductor device Contact process and structure for a semiconductor device

2006-09-12

2006-09-12

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S133000, C438S268000

Reexamination Certificate

active

07105410

ABSTRACT:
A contact process for a semiconductor device containing a base region of a first conductivity type formed on a semiconductor substrate comprises formation of a first shallow layer of the first conductivity type on the base region, deposition of an insulator on the first shallow layer, etching the insulator and first shallow layer to form a contact hole, thermally driving the first shallow layer more deeply into said base region, formation of a second shallow layer of a second conductivity type on the base region at the bottom of the contact hole, filling a metal in the contact hole to contact the sidewall of the first shallow layer and the second shallow layer.

REFERENCES:
patent: 6551881 (2003-04-01), Letavic
patent: 6717210 (2004-04-01), Takano et al.
patent: 6818946 (2004-11-01), Venkatraman
patent: 2005/0035398 (2005-02-01), Williams et al.

Affiliated with

Also associated with

Rating

Contact process and structure for a semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Contact process and structure for a semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Contact process and structure for a semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3600996