Contact patterning method with transition etch feedback

Details Contact patterning method with transition etch feedback Contact patterning method with transition etch feedback

2011-08-16

2011-08-16

Kebede, Brook (Department: 2894)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

Reexamination Certificate

active

07998869

ABSTRACT:
A method for forming a contact hole in a semiconductor device and related computer-readable storage medium are provided, the method and program steps of the medium including measuring a percentage of oxygen in an etching chamber, and controlling the percentage of oxygen in the etching chamber to enlarge a temporary inner diameter near a top of the contact hole.

REFERENCES:
patent: 6127278 (2000-10-01), Wang et al.
patent: 6506674 (2003-01-01), Ikeda et al.
patent: 2007/0224835 (2007-09-01), Iriguchi
patent: 1020010018821 (2001-03-01), None

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