Contact gate structure and method

Details Contact gate structure and method Contact gate structure and method

1997-12-09

2000-10-03

Nelms, David

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438233, 438238, 438248, H01L 218242

Patent

active

061272140

ABSTRACT:
A semiconductor device (2) includes contact gate structures (28, 30) associated with contacts (82, 84) to source/drain regions (42, 44). Each contact (82, 84) includes a polysilicon layer (50) overlying the associated contact gate structure (28, 30) and source/drain region (42, 44). The polysilicon layer (50) may include different doped regions (52, 58) in accordance with the design and function of the device (2).

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