Contact forming method and related semiconductor device

Details Contact forming method and related semiconductor device Contact forming method and related semiconductor device

2011-06-28

2011-06-28

Tran, Thien F (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S383000

Reexamination Certificate

active

07968949

ABSTRACT:
Contact forming methods and a related semiconductor device are disclosed. One method includes forming a first liner over the structure and the substrate, the first liner covering sidewall of the structure; forming a dielectric layer over the first liner and the structure; forming a contact hole in the dielectric layer to the first liner; forming a second liner in the contact hole including over the first liner covering the sidewall; removing the first and second liners at a bottom of the contact hole; and filling the contact hole with a conductive material to form the contact. The thicker liner(s) over the sidewall of the structure prevents shorting, and allows for at least maintaining any intrinsic stress in one or more of the liner(s).

REFERENCES:
patent: 6960523 (2005-11-01), Maldei et al.
patent: 7071517 (2006-07-01), Kim et al.
patent: 2002/0132403 (2002-09-01), Hung et al.
patent: 2004/0043574 (2004-03-01), Steiner et al.
patent: 2004/0092090 (2004-05-01), Han et al.
patent: 2005/0208725 (2005-09-01), Kim et al.
patent: 2006/0009041 (2006-01-01), Iyer et al.
patent: 2006/0094216 (2006-05-01), Nam
patent: 2007/0138564 (2007-06-01), Lim et al.

Affiliated with

Also associated with

Rating

Contact forming method and related semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Contact forming method and related semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Contact forming method and related semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2624420