Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-07-18
2009-06-23
Everhart, Caridad M (Department: 2895)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S004000, C438S742000, C257SE21582, C257SE21483
Reexamination Certificate
active
07550381
ABSTRACT:
Method for recovering treated metal silicide surfaces or layers are provided. In at least one embodiment, a substrate having an at least partially oxidized metal silicide surface disposed thereon is cleaned to remove the oxidized regions to provide an altered metal silicide surface. The altered metal silicide surface is then exposed to one or more silicon-containing compounds at conditions sufficient to recover the metal silicide surface.
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Chang Mei
Kao Chien-Teh
Lai Chiukin Steve
Lu Xinliang
Applied Materials Inc.
Everhart Caridad M
Patterson & Sheridan LLP
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