Construction of a tantalum nitride film on a semiconductor wafer

Details Construction of a tantalum nitride film on a semiconductor wafer Construction of a tantalum nitride film on a semiconductor wafer

1997-09-26

1999-11-23

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438643, 438648, 438653, 438656, 438660, 438663, 438685, H01L 214763

Patent

active

059899999

ABSTRACT:
The construction of a film on a wafer, which is placed in a processing chamber, may be carried out through the following steps. A layer (film) of tantalum nitride material is deposited on the wafer. Next, the layer of tantalum nitride material is annealed. The deposition and annealing may both be accomplished in the same chamber, without need for removing the wafer from the chamber until both steps are completed.

REFERENCES:
patent: 5552341 (1996-09-01), Lee
patent: 5567483 (1996-10-01), Foster et al.
patent: 5801098 (1998-09-01), Fiordalice et al.

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