Constant emissivity deposition member

Details Constant emissivity deposition member Constant emissivity deposition member

2006-05-02

2006-05-02

Lee, Hsien-Ming (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S681000, C438S800000, C427S585000, C118S715000

Reexamination Certificate

active

07037834

ABSTRACT:
A deposition member adapted for discharging a deposition material during a deposition process can acquire a coating during the deposition. Such an initial emissivity value is selected for the deposition member, before any of the coating became deposited, that the emissivity of the deposition member remains substantially unchanged during the deposition process. In a representative embodiment the deposition member is coated with an appropriate thin layer for achieving the selected emissivity value.

REFERENCES:
patent: 6313035 (2001-11-01), Sandhu et al.
patent: 6454860 (2002-09-01), Metzner et al.
patent: 6582522 (2003-06-01), Luo et al.
patent: 6802906 (2004-10-01), Jin et al.
patent: 2002/0192370 (2002-12-01), Metzner

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