Connection structure and method for fabricating the same

Details Connection structure and method for fabricating the same Connection structure and method for fabricating the same

2006-10-10

2009-02-24

Le, Thao X (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

Reexamination Certificate

active

07495339

ABSTRACT:
There is provided a connection structure between a Si electrode (Si member) and an Al wire (Al member). Between the Si electrode and the Al wire, a first part and second parts are present in interposed relation. Each of the first and second parts is in contact with the Si electrode and with the Al wire. In the first part, a Si oxide layer and an Al oxide layer are present. The Si oxide layer is in contact with the Si electrode. The Al oxide layer is interposed between the Si oxide layer and the Al wire. In some of the second parts, Al is present. In the others of the second parts, a Si portion and an Al portion are present.

REFERENCES:
patent: 4564734 (1986-01-01), Okikawa
patent: 6858943 (2005-02-01), Peterson et al.
patent: 2002-27595 (2002-01-01), None
patent: 2005-193336 (2005-07-01), None

Affiliated with

Also associated with

Rating

Connection structure and method for fabricating the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Connection structure and method for fabricating the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Connection structure and method for fabricating the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4085739