Conductive bi-layer e-beam resist with amorphous carbon

Details Conductive bi-layer e-beam resist with amorphous carbon Conductive bi-layer e-beam resist with amorphous carbon

2005-07-05

2005-07-05

Young, Christopher G. (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Electron beam imaging

C430S313000, C430S314000, C430S317000, C430S942000

Reexamination Certificate

active

06913868

ABSTRACT:
Methods for forming a patterned layer of amorphous carbon on a substrate are described. A layer of amorphous carbon may be formed on the substrate. A layer of electron sensitive resist may be formed on top of the amorphous carbon layer. A pattern transferred into the electron sensitive resist layer with an electron beam writing process is developed. During the electron beam writing process, electrons may be conducted away from the writing area through the amorphous carbon layer. The amorphous carbon layer may be etched through in at least one region defined by the pattern developed into the layer of electron sensitive resist material. For some embodiments, the amorphous carbon layer may be formed by chemical vapor deposition. For some embodiments, the layer of electron sensitive resist may be hydrogen silsesquioxane (HSQ).

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Baik, et al.;REAP(Raster E-Beam Advanced)Using 50kV Raster E-beam System for Sub-100nm Node Mask Technology; Etec Systems, Inc.
Jamieson, et al.;Hydrogen Silsesquioxane Bilayer Resist Process for Low-Voltage Electron beam lithography; Paper 136 (1171-1179); Mar. 2002.
van Delft, et al.;Hydrogen Silsesquioxane/Novolak Bilayer Resist for High Aspect Ratio Nanoscale Electron-beam Lithography; J. Vac. Sci. Technol. B 18(6), Nov./Dec. 2000.
Helmbold, et al.;Electrical Conductivity of Amorphous Hydrogenated Carbon; Philosophical Magazine B, 1995, vol. 72, No. 3, 335-350.

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