Composition for dielectric thin film, metal oxide dielectric...

Details Composition for dielectric thin film, metal oxide dielectric... Composition for dielectric thin film, metal oxide dielectric...

2011-08-02

2011-08-02

Parker, Ken A (Department: 2815)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C257S040000, C257S310000, C257SE51007, C438S099000, C438S780000

Reexamination Certificate

active

07989361

ABSTRACT:
This invention pertains to a composition for a dielectric thin film, which is capable of being subjected to a low-temperature process. Specifically, the invention is directed to a metal oxide dielectric thin film formed using the composition, a preparation method thereof, a transistor device comprising the dielectric thin film, and an electronic device comprising the transistor device. The electronic device to which the dielectric thin film has been applied exhibits excellent electrical properties, thereby satisfying both a low operating voltage and a high charge mobility.

REFERENCES:
patent: 6344242 (2002-02-01), Stolk et al.
patent: 2005/0277274 (2005-12-01), Karkkainen
patent: 2006/0079400 (2006-04-01), Lobo et al.
patent: 2008/0274037 (2008-11-01), Gross et al.

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