Composite stress spacer

Details Composite stress spacer Composite stress spacer

2007-08-14

2007-08-14

Trinh, Michael (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S230000, C438S231000, C257SE21637

Reexamination Certificate

active

11122667

ABSTRACT:
An example method embodiment forms spacers that create tensile stress on the substrate on both the PFET and NFET regions. We form PFET and NFET gates and form tensile spacers on the PFET and NFET gates. We implant first ions into the tensile PFET spacers to form neutralized stress PFET spacers. The neutralized stress PFET spacers relieve the tensile stress created by the tensile stress spacers on the substrate. This improves device performance.

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