Composite gate structure in an integrated circuit

Details Composite gate structure in an integrated circuit Composite gate structure in an integrated circuit

2007-11-20

2007-11-20

Kebede, Brook (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S287000, C257SE29126, C257SE21637

Reexamination Certificate

active

11648964

ABSTRACT:
An integrated circuit having composite gate structures and a method of forming the same are provided. The integrated circuit includes a first MOS device, a second MOS device and a third MOS device. The gate stack of the first MOS device includes a high-k gate dielectric and a first metal gate on the high-k gate dielectric. The gate stack of the second MOS device includes a second metal gate on a high-k gate dielectric. The first metal gate and the second metal gate have different work functions. The gate stack of the third MOS device includes a silicon gate over a gate dielectric. The silicon gate is preferably formed over the gate stacks of the first MOS device and the second MOS device.

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