Complete device layer transfer without edge exclusion via...

Details Complete device layer transfer without edge exclusion via... Complete device layer transfer without edge exclusion via...

2007-01-09

2007-01-09

Potter, Roy Karl (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

C257S777000

Reexamination Certificate

active

11103217

ABSTRACT:
More complete bonding of wafers may be achieved out to the edge regions of the wafer by constrained bond strengthening of the wafers in a pressure bonding apparatus after direct wafer bonding. The pressure bonding process may be accompanied by the application of not above room temperature.

REFERENCES:
patent: 4254426 (1981-03-01), Pankove
patent: 5932048 (1999-08-01), Furukawa et al.
patent: 6534381 (2003-03-01), Cheung et al.

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