Complete device layer transfer without edge exclusion via...

Details Complete device layer transfer without edge exclusion via... Complete device layer transfer without edge exclusion via...

2005-06-21

2005-06-21

Johnson, Jonathan (Department: 1725)

Metal fusion bonding

Process

Specific mode of heating or applying pressure

C228S212000

Reexamination Certificate

active

06908027

ABSTRACT:
More complete bonding of wafers may be achieved out to the edge regions of the wafer by constrained bond strengthening of the wafers in a pressure bonding apparatus after direct wafer bonding. The pressure bonding process may be accompanied by the application of not above room temperature.

REFERENCES:
patent: 4939101 (1990-07-01), Black et al.
patent: 5273553 (1993-12-01), Hoshi et al.
patent: 5932048 (1999-08-01), Furukawa et al.
patent: 6008113 (1999-12-01), Ismail et al.
patent: 6423613 (2002-07-01), Geusic
patent: 11-067701 (1999-09-01), None
Translation to JP 11-067701. Shuhei. Sep. 1999. 5 pages.

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