Complementary metal oxide semiconductor (CMOS) gate stack...

Details Complementary metal oxide semiconductor (CMOS) gate stack... Complementary metal oxide semiconductor (CMOS) gate stack...

2007-01-30

2007-01-30

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S301000, C438S302000, C438S303000, C438S304000, C438S305000, C438S142000, C438S198000, C438S216000, C438S287000, C438S310000, C438S368000, C438S371000, C438S373000, C438S374000, C438S372000, C257SE21051

Reexamination Certificate

active

11066762

ABSTRACT:
A diffusion barrier (and method for forming the diffusion barrier) for a field-effect transistor having a channel region and a gate electrode, includes an insulating material being disposed over the channel region. The insulating material includes nitrogen (N), and is disposed under the gate electrode. The insulating material can be provided either as a layer or distributed within a gate dielectric material disposed under the gate electrode.

REFERENCES:
patent: 5763922 (1998-06-01), Chau
patent: 6013553 (2000-01-01), Wallace et al.
patent: 6020024 (2000-02-01), Maiti et al.
patent: 6020243 (2000-02-01), Wallace et al.
patent: 6107667 (2000-08-01), An et al.
patent: 6277681 (2001-08-01), Wallace et al.
patent: 6340827 (2002-01-01), Choi et al.
patent: 6383873 (2002-05-01), Hedge et al.
patent: 6407435 (2002-06-01), Ma et al.
patent: 6429052 (2002-08-01), Gardner et al.
patent: 6548912 (2003-04-01), Graff et al.
patent: 6831339 (2004-12-01), Bojarczuk et al.

Affiliated with

Also associated with

Rating

Complementary metal oxide semiconductor (CMOS) gate stack... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Complementary metal oxide semiconductor (CMOS) gate stack..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Complementary metal oxide semiconductor (CMOS) gate stack... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3790937