Combined dry and wet etch for improved silicide formation

Details Combined dry and wet etch for improved silicide formation Combined dry and wet etch for improved silicide formation

1997-10-24

2000-04-04

Utech, Benjamin L.

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

438704, 438712, 438733, 438734, 438745, H01L 21302

Patent

active

060461136

ABSTRACT:
A method of removing an outer layer from an inner surface during semiconductor fabrication. A portion of the outer layer (50) may be anisotropically etched. A remaining portion of the outer layer (55) may then be wet etched without impairing the inner surface (12).

REFERENCES:
patent: 5464782 (1995-11-01), Koh
patent: 5652172 (1997-07-01), Peng Yung-Sung et al.
patent: 5912185 (1999-06-01), Kwon

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