Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2005-11-22
2005-11-22
Nelms, David (Department: 2818)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S724000
Reexamination Certificate
active
06967172
ABSTRACT:
A colloidal suspension of nanoparticles composed of a dense material dispersed in a solvent is used in forming a gap-filling dielectric material with low thermal shrinkage. The dielectric material is particularly useful for pre-metal dielectric and shallow trench isolation applications. According to the methods of forming a dielectric material, the colloidal suspension is deposited on a substrate and dried to form a porous intermediate layer. The intermediate layer is modified by infiltration with a liquid phase matrix material, such as a spin-on polymer, followed by curing, by infiltration with a gas phase matrix material, followed by curing, or by curing alone, to provide a gap-filling, thermally stable, etch resistant dielectric material.
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Deng Yanpei
Endisch Denis
Hacker Nigel
Leung Roger
Xie Songyuan
Bingham McCutchen
Honeywell International , Inc.
Nelms David
Nguyen Thinh T
Thompson Sandra P.
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