Thyristor-type memory device

Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor

Reexamination Certificate

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C257S133000, C257S135000

Reexamination Certificate

active

06967358

ABSTRACT:
A thyristor device can be used to implement a variety of semiconductor memory circuits, including high-density memory-cell arrays and single cell circuits. In one example embodiment, the thyristor device includes doped regions of opposite polarity, and a first word line that is used to provide read and write access to the memory cell. A second word line is located adjacent to and separated by an insulative material from one of the doped regions of the thyristor device for write operations to the memory cell, for example, by enhancing the switching of the thyristor device from a high conductance state to a low conductance state and/or from the low conductance state to the high conductance. This type of memory circuit can be implemented to significantly reduce standby power consumption and access time.

REFERENCES:
patent: 3863229 (1975-01-01), Gersbach
patent: 3918033 (1975-11-01), Case et al.
patent: 3986177 (1976-10-01), Picquendar et al.
patent: 4090254 (1978-05-01), Ho et al.
patent: 4146902 (1979-03-01), Tanimoto et al.
patent: 4590589 (1986-05-01), Gerzberg
patent: 4612448 (1986-09-01), Strack
patent: 4677455 (1987-06-01), Okajima
patent: 4959703 (1990-09-01), Ogura et al.
patent: 5321285 (1994-06-01), Lee et al.
patent: 5324966 (1994-06-01), Muraoka et al.
patent: 5390145 (1995-02-01), Nakasha et al.
patent: 5396454 (1995-03-01), Nowak
patent: 5412598 (1995-05-01), Shulman
patent: 5464994 (1995-11-01), Shinohe et al.
patent: 5471419 (1995-11-01), Sankaranarayanan et al.
patent: 5525820 (1996-06-01), Furuyama
patent: 5543652 (1996-08-01), Ikeda et al.
patent: 5587944 (1996-12-01), Shen et al.
patent: 5689458 (1997-11-01), Kuriyama
patent: 5874751 (1999-02-01), Iwamuro et al.
patent: 5910738 (1999-06-01), Shinohe et al.
patent: 5914503 (1999-06-01), Iwamuro et al.
patent: 5936267 (1999-08-01), Iwamuro
patent: 5939736 (1999-08-01), Takahashi
patent: 5981984 (1999-11-01), Iwaana et al.
patent: 6229161 (2001-05-01), Nemati et al.
patent: 6448586 (2002-09-01), Nemati et al.
patent: 6528356 (2003-03-01), Nemati et al.
patent: 6727529 (2004-04-01), Nemati et al.
patent: 2 110 326 (1972-06-01), None
patent: 57 208177 (1982-12-01), None
F. Nemati and J.D. Plummer,A Novel Thyristor-based SRAM Cell(T-RAM)for High-Speed, Low-Voltage, Giga-scale Memories, Center for Integrated Systems, Stanford University, Stanford, CA., 1999.
F. Nemati and J.D. Plummer,A Novel High Density, Low Voltage SRAM Cell with a Vertical NDR Device, Center for Integrated Systems, Stanford University, Stanford, CA 94305.
F. Nemati and J.D. Plummer,A Novel Vertical Storage SRAM Cell, Student Paper written for Center for Integrated Systems, Stanford University, Stanford, CA 94305.
Baliga, B.Jayant,Modem Power Devices, pp. 349-350.
S. M. Sze,Physics of Semiconductor Devices Second Edition, John Wiley & Sons, pp. 198-209, 1981.
Plummer, James D. and Scharf, Brad W.,Insulated-Gate Planar Thyristors: I-Structure and Basic Operation, pp. 380-386.

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