Coated semiconductor wafer, and process and device for...

Details Coated semiconductor wafer, and process and device for... Coated semiconductor wafer, and process and device for...

2006-09-05

2006-09-05

Everhart, Caridad (Department: 2891)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257SE21575, C118S732000

Reexamination Certificate

active

07101794

ABSTRACT:
A susceptor for a semiconductor wafer to be placed on during deposition of a layer on a front surface of the semiconductor wafer by chemical vapor deposition (CVD), has a gas-permeable structure with a porosity of at least 15% and a density of from 0.5 to 1.5 g/cm3. There is also a semiconductor wafer having a back surface and a front surface which has been coated by chemical vapor deposition (CVD) and a polished or etched back surface. The nanotopography of the back surface, expressed as the height fluctuation PV (=peak to valley), is less than 5 nm. There is a process for producing the semiconductor wafer.

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Derwent Patent Family history, 3 pages, DWPI, May 26, 2005.

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