CMP variable angle in situ sensor

Details CMP variable angle in situ sensor CMP variable angle in situ sensor

1997-03-11

1998-11-17

Pham, Hoa Q.

Optics: measuring and testing

By configuration comparison

With photosensitive film or plate

438 16, 438692, 216 84, 356357, G01B 1106

Patent

active

058384480

ABSTRACT:
A chemical-mechanical polishing (CMP) optical process monitor apparatus allows in situ measurement of the thickness of a thin film being polished. As the incidence angle of the incident light on the wafer being polished is changed, the reflected intensity of the light from the thin film on the wafer undergoes a variation in local maxima and minima. The angle at which the light intensity is a maximum or minimum determined by the thin film interference equation, thus providing a measurement of the thin film thickness and/or the change in the thin film thickness.

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