Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-07-12
2008-03-25
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257SE21634, C257SE21438, C257SE21439, C438S264000
Reexamination Certificate
active
07348248
ABSTRACT:
A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a gate dielectric over a substrate, a gate electrode over the gate dielectric, a slim gate spacer along a side of the gate electrode, and a source/drain region substantially aligned with an edge of the slim gate spacer. The source/drain region includes a first implantation region having an overlap with the gate electrode, a second implantation region further away from the channel region than the first implantation region, and a third implantation region further away from the channel region than the second implantation region. The source/drain region preferably further comprises an epitaxy region spaced apart from the slim gate spacer.
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Dinh Thu-Huong
Lebentritt Michael
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
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