CMOS thin film transistor comprising common gate, logic...

Details CMOS thin film transistor comprising common gate, logic... CMOS thin film transistor comprising common gate, logic...

2005-12-16

2008-10-07

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S204000, C257S206000, C257S369000, C257SE27046, C438S199000

Reexamination Certificate

active

07432554

ABSTRACT:
A complementary metal oxide semiconductor (CMOS) thin film transistor including a common gate, a logic device including the CMOS thin film transistor, and a method of manufacturing the CMOS thin film transistor are provided. In one embodiment, the CMOS thin film transistor includes a base substrate and a semiconductor layer formed on the base substrate. A PMOS transistor and an NMOS transistor are formed on a single semiconductor layer to intersect each other, and a common gate is formed on the intersection area. In addition, a Schottky barrier inducing material layer is formed on a source and a drain of the PMOS transistor.

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