Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2008-06-24
2010-02-02
Sarkar, Asok K (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257SE21199, C257SE21200, C438S649000, C438S651000, C438S655000, C438S664000, C438S682000
Reexamination Certificate
active
07655557
ABSTRACT:
The present invention provides a complementary metal oxide semiconductor integration process whereby a plurality of silicided metal gates are fabricated atop a gate dielectric. Each silicided metal gate that is formed using the integration scheme of the present invention has the same silicide metal phase and substantially the same height, regardless of the dimension of the silicide metal gate. The present invention also provides various methods of forming a CMOS structure having silicided contacts in which the polySi gate heights are substantially the same across the entire surface of a semiconductor structure.
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Amos Ricky S.
Boyd Diane C.
Cabral, Jr. Cyril
Kaplan Richard D.
Kedzierski Jakub T.
International Business Machines - Corporation
Percello, Esq. Louis J.
Sarkar Asok K
Scully , Scott, Murphy & Presser, P.C.
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