CMOS on hybrid substrate with different crystal orientations...

Details CMOS on hybrid substrate with different crystal orientations... CMOS on hybrid substrate with different crystal orientations...

2008-04-29

2008-04-29

Smoot, Stephen W. (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S199000, C438S455000, C438S504000, C257SE21600

Reexamination Certificate

active

11327966

ABSTRACT:
A method in which semiconductor-to-semiconductor direct wafer bonding is employed to provide a hybrid substrate having semiconductor layers of different crystallographic orientations that are separated by a conductive interface is provided. Also provided are the hybrid substrate produced by the method as well as using the direct bonding method to provide an integrated semiconductor structure in which various CMOS devices are built upon a surface orientation that enhances device performance.

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