CMOS integrated circuit devices and substrates having buried...

Details CMOS integrated circuit devices and substrates having buried... CMOS integrated circuit devices and substrates having buried...

2005-07-05

2005-07-05

Lee, Eddie (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S348000, C438S149000, C438S497000

Reexamination Certificate

active

06914301

ABSTRACT:
CMOS integrated circuit devices include an electrically insulating layer and an unstrained silicon active layer on the electrically insulating layer. An insulated gate electrode is also provided on a surface of the unstrained silicon active layer. A Si1-xGexlayer is also disposed between the electrically insulating layer and the unstrained silicon active layer. The Si1-xGexlayer forms a first junction with the unstrained silicon active layer and has a graded concentration of Ge therein that decreases monotonically in a first direction extending from a peak level towards the surface of the unstrained silicon active layer. The peak Ge concentration level is greater than x=0.15 and the concentration of Ge in the Si1-xGexlayer varies from the peak level to a level less than about x=0.1 at the first junction. The concentration of Ge at the first junction may be abrupt. More preferably, the concentration of Ge in the Si1-xGexlayer varies from the peak level where 0.2<x<0.4 to a level where x=0 at the first junction. The Si1-xGexlayer also has a retrograded arsenic doping profile therein relative to the surface. This retrograded profile may result in the Si1-xGexlayer having a greater concentration of first conductivity type dopants therein relative to the concentration of first conductivity type dopants in a channel region within the unstrained silicon active layer. The total amount of dopants in the channel region and underlying Si1-xGexlayer can also be carefully controlled to achieve a desired threshold voltage.

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