Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2004-12-23
2008-03-11
Smith, Zandra V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S432000, C257S443000, C257S457000, C257SE27134
Reexamination Certificate
active
07342268
ABSTRACT:
An image sensor and method of fabrication wherein the sensor includes Copper (Cu) metallization levels allowing for incorporation of a thinner interlevel dielectric stack to result in a pixel array exhibiting increased light sensitivity. The image sensor includes structures having a minimum thickness of barrier layer metal that traverses the optical path of each pixel in the sensor array or, that have portions of barrier layer metal selectively removed from the optical paths of each pixel, thereby minimizing reflectance. That is, by implementing various block or single mask methodologies, portions of the barrier layer metal are completely removed at locations of the optical path for each pixel in the array. In a further embodiment, the barrier metal layer may be formed atop the Cu metallization by a self-aligned deposition.
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Adkisson James W.
Gambino Jeffrey P.
Jaffe Mark D.
Leidy Robert K.
Rassel Richard J.
Chiu Tsz
International Business Machines - Corporation
Sabo, Esq. William D.
Scully , Scott, Murphy & Presser, P.C.
Smith Zandra V.
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