Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-05-17
2011-05-17
Richards, N Drew (Department: 2895)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S048000, C438S073000, C438S074000, C438S075000, C438S584000, C438S638000, C438S686000, C438S526000, C257S445000, C257S223000, C257S292000, C257S059000, C257S233000, C257S446000, C257SE21642, C257SE27133, C257SE31057, C257SE31001, C257SE31085, C257SE31131
Reexamination Certificate
active
07943455
ABSTRACT:
CMOS image sensors and methods of fabricating the same. The CMOS image sensors include a pixel array region having an active pixel portion and an optical block pixel portion which encloses the active pixel portion. The optical block pixel portion includes an optical block metal pattern for blocking light. The optical block metal pattern may be connected to a ground portion.
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Harness & Dickey & Pierce P.L.C.
Richards N Drew
Samsung Electronics Co,. Ltd.
Singal Ankush k
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