CMOS image sensors and methods of fabricating the same

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S048000, C438S073000, C438S074000, C438S075000, C438S584000, C438S638000, C438S686000, C438S526000, C257S445000, C257S223000, C257S292000, C257S059000, C257S233000, C257S446000, C257SE21642, C257SE27133, C257SE31057, C257SE31001, C257SE31085, C257SE31131

Reexamination Certificate

active

07943455

ABSTRACT:
CMOS image sensors and methods of fabricating the same. The CMOS image sensors include a pixel array region having an active pixel portion and an optical block pixel portion which encloses the active pixel portion. The optical block pixel portion includes an optical block metal pattern for blocking light. The optical block metal pattern may be connected to a ground portion.

REFERENCES:
patent: 4373167 (1983-02-01), Yamada
patent: 4467341 (1984-08-01), Suzuki
patent: 4672455 (1987-06-01), Miyatake
patent: 4717945 (1988-01-01), Yusa et al.
patent: 4737833 (1988-04-01), Tabei
patent: 4912560 (1990-03-01), Osawa et al.
patent: 4980735 (1990-12-01), Yamawaki
patent: 5619049 (1997-04-01), Kim
patent: 5847381 (1998-12-01), Isogai
patent: 5965875 (1999-10-01), Merrill
patent: 6091793 (2000-07-01), Kamashita
patent: 6235549 (2001-05-01), Bawolek et al.
patent: 6316814 (2001-11-01), Nagata et al.
patent: 6403998 (2002-06-01), Inoue
patent: 6465859 (2002-10-01), Fujiwara et al.
patent: 6472698 (2002-10-01), Nakashiba
patent: 6617189 (2003-09-01), Lin et al.
patent: 6642076 (2003-11-01), Yaung et al.
patent: 6744526 (2004-06-01), McDermott et al.
patent: 6781178 (2004-08-01), Shizukuishi
patent: 6861686 (2005-03-01), Lee et al.
patent: 6903322 (2005-06-01), Nakashima
patent: 6995411 (2006-02-01), Yaung et al.
patent: 7002231 (2006-02-01), Rhodes et al.
patent: 7372497 (2008-05-01), Weng et al.
patent: 7393715 (2008-07-01), Tazoe et al.
patent: 7417702 (2008-08-01), Yamazaki
patent: 7427740 (2008-09-01), Park et al.
patent: 7446359 (2008-11-01), Lee et al.
patent: 7482570 (2009-01-01), Inoue et al.
patent: 7511257 (2009-03-01), Lee et al.
patent: 7521350 (2009-04-01), Kurashima et al.
patent: 7534642 (2009-05-01), Choi
patent: 7545423 (2009-06-01), Park et al.
patent: 7564083 (2009-07-01), Sze et al.
patent: 7633106 (2009-12-01), Adkisson et al.
patent: 7709863 (2010-05-01), Kumesawa
patent: 7710477 (2010-05-01), Nam et al.
patent: 7760254 (2010-07-01), Suzuki
patent: 7800191 (2010-09-01), Ohtsuki et al.
patent: 2002/0022309 (2002-02-01), Dierickx
patent: 2002/0149718 (2002-10-01), Melnik et al.
patent: 2003/0057431 (2003-03-01), Kozuka et al.
patent: 2003/0116768 (2003-06-01), Ishikawa
patent: 2004/0002178 (2004-01-01), Fasen et al.
patent: 2004/0126934 (2004-07-01), Itano et al.
patent: 2004/0140564 (2004-07-01), Lee et al.
patent: 2005/0067640 (2005-03-01), Ohkawa
patent: 2005/0189535 (2005-09-01), Hsueh et al.
patent: 2005/0230775 (2005-10-01), Watanabe et al.
patent: 2005/0233493 (2005-10-01), Augusto
patent: 2006/0084195 (2006-04-01), Lyu
patent: 2006/0121640 (2006-06-01), Kim
patent: 2006/0132633 (2006-06-01), Nam et al.
patent: 2006/0175535 (2006-08-01), Park et al.
patent: 2006/0202295 (2006-09-01), Wu et al.
patent: 2006/0237629 (2006-10-01), Oda
patent: 2006/0278869 (2006-12-01), Hioki et al.
patent: 2007/0052051 (2007-03-01), Osaka et al.
patent: 2007/0131977 (2007-06-01), Boisvert et al.
patent: 2007/0152286 (2007-07-01), Ahn
patent: 2007/0153337 (2007-07-01), Kim
patent: 2007/0194400 (2007-08-01), Yokoyama
patent: 2007/0210395 (2007-09-01), Maruyama et al.
patent: 2008/0001179 (2008-01-01), Roy
patent: 2008/0029837 (2008-02-01), Kameda et al.
patent: 2008/0111159 (2008-05-01), Gambino et al.
patent: 2008/0129911 (2008-06-01), Huang et al.
patent: 08-306902 (1996-11-01), None
patent: 10-289994 (1998-10-01), None
patent: 2005-117018 (2005-04-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

CMOS image sensors and methods of fabricating the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with CMOS image sensors and methods of fabricating the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and CMOS image sensors and methods of fabricating the same will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2638698

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.