CMOS image sensor device and method

Details CMOS image sensor device and method CMOS image sensor device and method

2005-09-20

2005-09-20

Schillinger, Laura M (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S305000, C438S592000

Reexamination Certificate

active

06946352

ABSTRACT:
A photodiode device including a well located in a substrate, a floating node located in the well and shallow trench isolation (STI) regions located over and laterally opposing the floating node. A borderless contact buffer layer is located over at least the floating node, and an interlevel dielectric layer is located over the borderless contact buffer layer. A borderless contact extends through the interlevel dielectric layer and the borderless contact buffer layer to the floating node.

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patent: 6444566 (2002-09-01), Tsai et al.
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patent: 6743726 (2004-06-01), Lu et al.
patent: 6784094 (2004-08-01), Yin et al.
patent: 6821883 (2004-11-01), Babcock et al.

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