CMOS gate structures fabricated by selective oxidation

Details CMOS gate structures fabricated by selective oxidation CMOS gate structures fabricated by selective oxidation

2006-02-16

2008-10-21

Lindsay, Jr., Walter L (Department: 2812)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Having heterojunction

C438S639000, C257SE21023, C257SE21025

Reexamination Certificate

active

07439144

ABSTRACT:
A sidewall image transfer process for forming sub-lithographic structures employs a layer of sacrificial polymer containing silicon that is deposited over a gate conductor layer and covered by a cover layer. The sacrificial polymer layer is patterned with conventional resist and etched to form a sacrificial mandrel. The edges of the mandrel are oxidized or nitrided in a plasma at low temperature, after which the polymer and the cover layer are stripped, leaving sublithographic sidewalls. The sidewalls are used as hardmasks to etch sublithographic gate structures in the gate conductor layer.

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