Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2008-01-02
2010-06-15
Kebede, Brook (Department: 2894)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257S255000, C257SE31085
Reexamination Certificate
active
07736966
ABSTRACT:
The present invention relates to a method of fabricating a semiconductor substrate that includes forming at least first and second device regions, wherein the first device region includes a first recess having interior surfaces oriented along a first set of equivalent crystal planes, and wherein the second device region includes a second recess having interior surfaces oriented along a second, different set of equivalent crystal planes. The semiconductor device structure formed using such a semiconductor substrate includes at least one n-channel field effect transistor (n-FET) formed at the first device region having a channel that extends along the interior surfaces of the first recess, and at least one p-channel field effect transistor (p-FET) formed at the second device region having a channel that extends along the interior surfaces of the second recess.
REFERENCES:
patent: 4455740 (1984-06-01), Iwai
patent: 5905283 (1999-05-01), Kasai
patent: 2003/0003759 (2003-01-01), Kudelka
patent: 2003/0190791 (2003-10-01), Fischetti et al.
patent: 2006/0197089 (2006-09-01), Kuo et al.
Chen Xiangdong
Dyer Thomas W.
Toomey James J.
Yang Haining S.
International Business Machines - Corporation
Kebede Brook
Schnurmann H. Daniel
Scully , Scott, Murphy & Presser, P.C.
Tran Tony
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