CMOS devices with balanced drive currents based on SiGe

Details CMOS devices with balanced drive currents based on SiGe CMOS devices with balanced drive currents based on SiGe

2006-04-25

2006-04-25

Whitehead, Jr., Carl (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

Reexamination Certificate

active

07033893

ABSTRACT:
CMOS devices with balanced drive currents are formed with a PMOS transistor based on SiGe and a deposited high-k gate dielectric. Embodiments including forming a composite substrate comprising a layer of strained Si on a layer of SiGe, forming isolation regions defining a PMOS region and an NMOS region, forming a thermal oxide layer on the strained Si layer, selectively removing the thermal oxide layer and strained Si layer from the PMOS region, depositing a layer of high-k material on the layer of SiGe in the PMOS region and then forming gate electrodes in the PMOS and NMOS regions.

REFERENCES:
patent: 5155571 (1992-10-01), Wang et al.
patent: 5847419 (1998-12-01), Imai et al.
patent: 5970331 (1999-10-01), Gardner et al.
patent: 6255700 (2001-07-01), Yoshida et al.
patent: 6310367 (2001-10-01), Yagishita et al.
patent: 6339232 (2002-01-01), Takagi
patent: 6455330 (2002-09-01), Yao et al.
patent: 6475869 (2002-11-01), Yu

Affiliated with

Also associated with

Rating

CMOS devices with balanced drive currents based on SiGe does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with CMOS devices with balanced drive currents based on SiGe, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and CMOS devices with balanced drive currents based on SiGe will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3593012