CMOS device with raised source and drain regions

Details CMOS device with raised source and drain regions CMOS device with raised source and drain regions

2011-08-30

2011-08-30

Loke, Steven (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S299000, C438S231000, C438S478000

Reexamination Certificate

active

08008157

ABSTRACT:
A method of forming a semiconductor structure includes forming a PMOS device and an NMOS device. The step of forming the PMOS device includes forming a first gate stack on a semiconductor substrate; forming a first offset spacer on a sidewall of the first gate stack; forming a stressor in the semiconductor substrate using the first offset spacer as a mask; and epitaxially growing a first raised source/drain extension (LDD) region on the stressor. The step of forming the NMOS device includes forming a second gate stack on the semiconductor substrate; forming a second offset spacer on a sidewall of the second gate stack; epitaxially growing a second raised LDD region on the semiconductor substrate using the second offset spacer as a mask; and forming a deep source/drain region adjoining the second raised LDD region.

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