Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-12-26
2006-12-26
Le, Thao X. (Department: 2814)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S592000, C438S216000, C438S585000
Reexamination Certificate
active
07153734
ABSTRACT:
A semiconductor device and a method for forming it are described. The semiconductor device comprises a metal NMOS gate electrode that is formed on a first part of a substrate, and a silicide PMOS gate electrode that is formed on a second part of the substrate.
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Barns Chris E.
Brask Justin K.
Chau Robert S.
Datta Suman
Doczy Mark L.
Intel Corporation
Le Thao X.
Plomier Michael D.
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