CMOS device with dual-epi channels and self-aligned contacts

Details CMOS device with dual-epi channels and self-aligned contacts CMOS device with dual-epi channels and self-aligned contacts

2007-03-15

2009-10-06

Garber, Charles D. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S199000, C438S218000, C438S221000, C438S222000, C438S226000, C257S351000, C257SE21626, C257SE21640

Reexamination Certificate

active

07598142

ABSTRACT:
A CMOS device having dual-epi channels comprises a first epitaxial region formed on a substrate, a PMOS device formed on the first epitaxial region, a second epitaxial region formed on the substrate, wherein the second epitaxial region is formed from a different material than the first epitaxial region, an NMOS device formed on the second epitaxial region, and electrical contacts coupled to the PMOS and NMOS devices, wherein the electrical contacts are self-aligned.

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patent: PCT/US2008/056939 (2008-03-01), None
Ranade, Pushkar, “Active Regions With Compatible Dielectric Layers”, filed: Sep. 18, 2006, U.S. Appl. No. 11/523,105.
Ranade, Pushkar, “Method of Forming CMOS Transistors With Dual-Metal Silicide Formed Through the Contact Openings and Structures Formed Thereby”, filed: Mar. 29, 2007, U.S. Appl. No. 11/693,608.

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