CMOS compatible process with different-voltage devices

Details CMOS compatible process with different-voltage devices CMOS compatible process with different-voltage devices

2007-04-17

2007-04-17

Smith, Bradley K. (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S299000

Reexamination Certificate

active

10914943

ABSTRACT:
A method of manufacturing different-voltage devices mainly comprises forming at least one high-voltage well in high-voltage device regions, at least one N-well in low-voltage device regions, at least one P-well in low-voltage device regions, source/drain wells in high-voltage device regions, and isolation wells in isolation regions in a p-type substrate. The breakdown voltage is adjusted by modulating the ion doping profile. Furthermore, parameters of implanting conductive ions are adjusted for implanting conductive ions into both high-voltage device regions and low-voltage device regions. The isolation wells formed in isolation regions between devices are for separating device formed over high-voltage device regions and device formed over low-voltage device regions. The thickness of a HV gate oxide layer is thicker than the thickness of an LV gate oxide layer for modulating threshold voltages of high-voltage devices and low-voltage devices.

REFERENCES:
patent: 6927114 (2005-08-01), Park
patent: 2004/0171197 (2004-09-01), Park

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