Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1993-05-17
1995-04-04
Nguyen, Nam
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
20429811, 20429831, 156643, 156646, C23C 1434
Patent
active
054034590
ABSTRACT:
When a collimator is employed between the target and a substrate support in a physical vapor deposition chamber, since the collimator is grounded to the chamber walls, the chamber becomes divided electrically, because the collimator acts as a barrier to the passage of the plasma. Thus a two step plasma cleaning process must be performed to remove native oxide and sputtered deposits on parts of the chamber, particularly when parts of the chamber are replaced or removed. The first plasma clean step is conventional and cleans the upper portion of the chamber including the upper surface of the collimator. A positive bias source is then connected to the substrate support and a second cleaning plasma generated between the collimator and the support which cleans the parts of the chamber below the collimator, including the bottom surface of the collimator.
REFERENCES:
patent: 4717462 (1988-01-01), Homma et al.
patent: 4786361 (1988-11-01), Sekine et al.
patent: 5171412 (1992-12-01), Talieh et al.
patent: 5202008 (1993-04-01), Talieh et al.
patent: 5223108 (1993-06-01), Hurwitt
EP Search Report for EP appln 94106325.7, Aug. 23, 1994.
Applied Materials Inc.
Morris Birgit E.
Nguyen Nam
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