Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Amorphous semiconductor
Reexamination Certificate
2006-06-13
2006-06-13
Dang, Phuc T. (Department: 2818)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Amorphous semiconductor
C438S108000, C438S667000
Reexamination Certificate
active
07060595
ABSTRACT:
A circuit substrate includes a board, a plurality of metal layers and an insulator. The board has a plurality of conductive traces layers and a via formed therein. The metal layers are formed on the inner wall of the via and each of the metal layers is electrically connected to its corresponding conductive traces layer. The via is filled with the insulator so that each of the metal layers is electrically isolated from each other. In addition, this invention also provides a fabrication method of the circuit substrate.
REFERENCES:
patent: 6406939 (2002-06-01), Lin
patent: 6600214 (2003-07-01), Ishikawa et al.
patent: 6618940 (2003-09-01), Lubert et al.
Chao Shin-Hua
Chen Chia-Shang
Hung Chih-Pin
Lin Kuang-Hua
Ou In-De
Advanced Semiconductor Engineering Inc.
Bacon & Thomas PLLC
Dang Phuc T.
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