Error detection/correction and fault detection/recovery – Pulse or data error handling – Replacement of memory spare location – portion – or segment
Reexamination Certificate
2005-07-12
2005-07-12
Ton, David (Department: 2133)
Error detection/correction and fault detection/recovery
Pulse or data error handling
Replacement of memory spare location, portion, or segment
C714S719000
Reexamination Certificate
active
06918072
ABSTRACT:
Circuitry is provided to allow early switching of input signals from a first configuration directed to blow a first anti-fuse to a second configuration directed to blow a second anti-fuse, yet still allow complete blowing of the first anti-fuse. Such circuitry may be applied to methods of repairing a memory device after testing. Data concerning available repair cells may be stored in at least one on-chip redundancy register.
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Cowles Timothy B.
Mohr Christian N.
Brantley Charles
Micro)n Technology, Inc.
Ton David
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