Circuit and method for time-efficient memory repair

Details Circuit and method for time-efficient memory repair Circuit and method for time-efficient memory repair

2005-07-12

2005-07-12

Ton, David (Department: 2133)

Error detection/correction and fault detection/recovery

Pulse or data error handling

Replacement of memory spare location, portion, or segment

C714S719000

Reexamination Certificate

active

06918072

ABSTRACT:
Circuitry is provided to allow early switching of input signals from a first configuration directed to blow a first anti-fuse to a second configuration directed to blow a second anti-fuse, yet still allow complete blowing of the first anti-fuse. Such circuitry may be applied to methods of repairing a memory device after testing. Data concerning available repair cells may be stored in at least one on-chip redundancy register.

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