Chip scale package with compliant leads

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means

Reexamination Certificate

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Details

C257S784000, C257S776000, C257S758000

Reexamination Certificate

active

06521970

ABSTRACT:

FIELD OF THE INVENTION
The present invention relates generally to integrated circuit packages. More specifically, the present invention relates to miniature chip scale packages manufactured in wafer form and improved package structures.
BACKGROUND OF THE INVENTION
With current emphasis on increased circuit density and decreased integrated circuit package footprints, process engineers attempt to design increasingly smaller and more dense integrated circuit packages. A current outgrowth of this emphasis is the chip scale package. Typically, a chip scale package has an overall package dimension that is relatively close to that of the integrated circuit die, or chip, that is enclosed within the package. Generally, chip scale packages are manufactured either using individual chips that have been singulated from a wafer, or in wafer form and then the individual chip scale packages are singulated from the wafer. The latter type of chip scale package is referred to as a wafer level chip scale package.
One example of a wafer level chip scale package is a surface mount die, such as a flip chip package. Surface mount dice typically have input/output contacts, such as solder bumps, that are located on the active surface of the die.
FIG. 1A
is a diagrammatic side view of a conventional flip chip package. Typically, the flip chip package
100
includes a die
102
having a plurality of conventionally fabricated integrated circuit structures, such as transistors, etc. (not shown). The top surface of the die
102
includes contact pads
104
which provide for conductive interconnection to the integrated circuit structures of the die
102
. Contact bumps
106
, such as solder bumps, are conventionally formed on the contact pads
104
to allow for interconnection of the package to other substrates. The bottom surface of the die
102
is conventionally left bare. Typically, a plurality of flip chip packages
100
are formed on the surface of an integrated circuit wafer (not shown). After fabrication of the flip chip packages, the wafer is singulated into individual flip chip packages
100
, for example, by laser cutting or sawing. The individual flip chips may then be inverted and attached to a substrate, such as a printed circuit board.
In attaching the flip chip to the substrate, the contact bumps are typically aligned and electrically coupled to an associated board contact of the substrate, for example, by a reflow process, which forms a solder joint. In this way, a high density of input/output pads are provided within a small package footprint as the contact pads are over the die itself. A disadvantage of this design is that stresses introduced on the contact bumps may damage the flip chip package.
FIG. 1B
is a diagrammatic side view of a conventional flip chip package attached to a substrate. Typically, the die
102
of the flip chip package
100
and the substrate
110
are formed from different materials that may have substantially different coefficients of thermal expansion. When the flip chip contact bumps
106
are attached to the contact pads
108
of the substrate
110
and power is applied, the resultant heat dissipates in the die
102
and the substrate
110
causing each to expand and contract in different amounts. This causes the contact bumps
106
, which are on the contact pads
104
of the die
102
, to move relative to the contact pads
108
of the substrate
110
.
As the solder joint in this design is a relatively rigid joint structure, the relative movement can deform and stress the contact bumps
106
and may ultimately result in damage to the flip chip package
100
, for example, solder joint fatigue. Further, the stresses on the contact bumps
106
may push the contact bumps
106
into the underlying layers that form the die
102
and cause craters within the die
102
. Additionally, the stresses may cause the contact bumps
106
to tear open.
To mitigate the effects of the stresses, an underfill layer
112
is typically injected between the substrate
110
and the flip chip package
100
and around the contact bumps
106
of the flip chip package
100
. The underfill layer
112
helps to reduce the stress effects of the differential thermal expansion between the die
102
and the substrate
110
and to improve the reliability of the package. However, the addition of the underfill layer
112
results in an extra processing step and increased associated costs, thus impacting overall production costs and production yield. Additionally, as the contact bumps
106
and underfill layer
112
are rigidly attached to the die
102
, the package
100
still retains some stress-related problems which can be transferred to and damage the die
102
.
Further, the design of the package
100
restrains both the arrangement of the contact bumps
106
and the arrangement of the contact pads
108
of a substrate to the arrangement of the contact pads
104
on the die
102
. Thus, this design tends to limit the packaging to use with smaller die sizes/pin counts, for example, 3×3 mm size/28-40 leads.
In an attempt to mitigate the stresses and costs associated with the above-described package, another design, further described in U.S. Pat. No. 5,834,844 to Akagawa et al., describes a wafer level process for forming a chip sized semiconductor package that utilizes a circuit-patterned insulation sheet adhered to a semiconductor die. External contacts for connecting to a substrate are formed on the insulation sheet and are conductively connected to the die through the insulation sheet.
FIG. 2
is a diagrammatic side view of an example of a portion of a conventional semiconductor package utilizing a circuit-patterned insulation sheet adhered to a semiconductor die. The semiconductor package
200
includes an integrated circuit die
202
, an insulation sheet
204
adhered to the die
202
, a circuit pattern
206
formed on the insulation sheet
204
, an electro-insulation layer
208
formed over the circuit pattern
206
and external contacts
210
connected to the circuit pattern
206
.
The die
202
typically includes a plurality of conventionally fabricated integrated circuit structures. The top surface of the die
202
includes bond pads
212
that provide interconnection to the integrated circuit structures of the die
202
. The die
202
further includes a passivation layer
214
having vias formed over the bond pads
212
. A first side of the insulation sheet
204
is attached to the die
202
and the second side has circuit patterns
206
formed on it in a predetermined pattern. The insulation sheet
204
has vias located over the bond pads
212
that are filled with a conductive material to provide a conductive connection between the bond pads
212
and the circuit pattern
206
. An electro-insulation layer
208
is formed to cover the insulation sheet
204
and the circuit patterns
206
and has vias formed in it over portions of the circuit pattern
206
. Contact bumps
210
are formed within the vias and conductively contact the circuit pattern
206
. Although the insulation sheet
204
may provide some stress absorption, the joint structure is still relatively rigid, and, as the insulation sheet
204
is adhered to the entire surface of the die
202
, some of the stresses introduced at the contact bump
210
may still be passed on to the die
202
.
Thus, there is a need for a wafer level fabricated chip scale integrated circuit package design having a more compliant connection that can mitigate stresses on the joint and can decouple the stresses from the die.
SUMMARY OF THE INVENTION
To achieve the foregoing, and in accordance with the purpose of the present invention, there are described wafer level chip scale integrated circuit package devices and methods for forming wafer level chip scale integrated circuit packages which provide highly compliant connections between external substrates and the packaged integrated circuit die, and, additionally, provide flexibility in locating the external contacts which may be connected to other substrates.
In one embodiment of the present

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