Chemistry for etching organic low-k materials

Details Chemistry for etching organic low-k materials Chemistry for etching organic low-k materials

1998-06-24

2000-03-21

Bueker, Richard

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

216 13, 216 51, 216 67, H01L 21302, H01L 21461, C23F 102

Patent

active

060402482

ABSTRACT:
A process for plasma etching of contact and via openings in low-k organic polymer dielectric layers is described which overcomes problems of sidewall bowing and hardmask pattern deterioration by etching the organic layer in a high density plasma etcher with a chlorine/inert gas plasma. By adding chlorine to the oxygen/inert gas plasma, the development of an angular aspect or faceting of the hardmask pattern edges by ion bombardment is abated. Essentially vertical sidewalls are obtained in the openings etched in the organic polymer layer while hardmask pattern integrity is maintained. The addition of a passivating agent such as nitrogen, BCl.sub.3, or CHF.sub.3 to the etchant gas mixture further improves the sidewall profile by reducing bowing through protective polymer formation.

REFERENCES:
patent: 4470871 (1984-09-01), White et al.
patent: 5007983 (1991-04-01), Lerner et al.
patent: 5204416 (1993-04-01), Mercer et al.
patent: 5482894 (1996-01-01), Havemann
patent: 5486493 (1996-01-01), Jeng
patent: 5591677 (1997-01-01), Jeng
patent: 5770095 (1998-06-01), Sasaki et al.
Noda et al. "A 2.9 .mu.m.sup.2 Embedded SRAM Cell with Co-Salicide Direct Strap Technology for 0.18 .mu.m High Performance CMOS Logic", IEDM '97, pp. 847-850.

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