Chemical vapor deposition apparatus

Details Chemical vapor deposition apparatus Chemical vapor deposition apparatus

2007-09-18

2007-09-18

Moore, Karla (Department: 1763)

Coating apparatus

Gas or vapor deposition

Chamber seal

C118S719000, C156S345310, C156S914000

Reexamination Certificate

active

10695726

ABSTRACT:
A chemical vapor deposition apparatus includes a subatmospheric substrate transfer chamber. A subatmospheric deposition chamber is defined at least in part by a chamber sidewall. A passageway in the chamber sidewall extends from the transfer chamber to the deposition chamber. Semiconductor substrates pass into and out of the deposition chamber through the passageway for deposition processing. A mechanical gate is included within at least one of the deposition chamber and the sidewall passageway, and is configured to open and close at least a portion of the passageway to the chamber. A chamber liner apparatus of a chemical vapor deposition apparatus forms a deposition subchamber within the chamber. At least a portion of the chamber liner apparatus is selectively movable to fully expose and to fully cover the passageway to the chamber.

REFERENCES:
patent: 1686468 (1928-10-01), Rosenberg
patent: 3618919 (1971-11-01), Beck
patent: 4289061 (1981-09-01), Emmett
patent: 4438724 (1984-03-01), Doehler et al.
patent: 4545136 (1985-10-01), Izu et al.
patent: 4871417 (1989-10-01), Nishizawa et al.
patent: 4948979 (1990-08-01), Munakata et al.
patent: 4949669 (1990-08-01), Ishii et al.
patent: 4951602 (1990-08-01), Kanai
patent: 5076205 (1991-12-01), Vowles et al.
patent: 5172849 (1992-12-01), Barten et al.
patent: 5223113 (1993-06-01), Kaneko et al.
patent: 5364219 (1994-11-01), Takahashi et al.
patent: 5445491 (1995-08-01), Nakagawa et al.
patent: 5484483 (1996-01-01), Kyogoku
patent: 5498292 (1996-03-01), Ozaki
patent: 5538317 (1996-07-01), Crain et al.
patent: 5562800 (1996-10-01), Kawamura et al.
patent: 5592581 (1997-01-01), Okase
patent: 5626936 (1997-05-01), Alderman
patent: 5640751 (1997-06-01), Faria
patent: 5693288 (1997-12-01), Nakamura
patent: 5746434 (1998-05-01), Boyd et al.
patent: 5769952 (1998-06-01), Komino
patent: 5820641 (1998-10-01), Gu et al.
patent: 5827370 (1998-10-01), Gu
patent: 5884009 (1999-03-01), Okase
patent: 5940684 (1999-08-01), Shakuda et al.
patent: 5997588 (1999-12-01), Goodwin et al.
patent: 6016611 (2000-01-01), White et al.
patent: 6045620 (2000-04-01), Tepman et al.
patent: 6089543 (2000-07-01), Freerks
patent: 6111225 (2000-08-01), Ohkase et al.
patent: 6174366 (2001-01-01), Ihantola
patent: 6178660 (2001-01-01), Emmi et al.
patent: 6192827 (2001-02-01), Welch et al.
patent: 6193802 (2001-02-01), Pang et al.
patent: 6194628 (2001-02-01), Pang et al.
patent: 6197119 (2001-03-01), Dozoretz et al.
patent: 6200415 (2001-03-01), Maraschin
patent: 6255222 (2001-07-01), Xia et al.
patent: 6263829 (2001-07-01), Schneider et al.
patent: 6280584 (2001-08-01), Kumar et al.
patent: 6309161 (2001-10-01), Hofmeister
patent: 6347918 (2002-02-01), Blahnik
patent: 6503331 (2003-01-01), Yudovsky et al.
patent: 6506254 (2003-01-01), Bosch et al.
patent: 6541353 (2003-04-01), Sandhu et al.
patent: 6562141 (2003-05-01), Clarke
patent: 6602346 (2003-08-01), Gochberg et al.
patent: 6638672 (2003-10-01), Deguchi
patent: 6673196 (2004-01-01), Oyabu
patent: 6814813 (2004-11-01), Dando et al.
patent: 6889627 (2005-05-01), Hao
patent: 2001/0054484 (2001-12-01), Komuno
patent: 2002/0185067 (2002-12-01), Upham
patent: 2002/0195201 (2002-12-01), Beer et al.
patent: 2004/0007188 (2004-01-01), Burkhart et al.
patent: 2004/0149214 (2004-08-01), Hirose et al.
patent: 2005/0028734 (2005-02-01), Carpenter et al.
patent: 63-256460 (1988-10-01), None
patent: 1-273991 (1989-11-01), None
patent: 4-100533 (1992-04-01), None
patent: 6-151558 (1994-05-01), None
patent: 6-342785 (1994-12-01), None
patent: 8-34678 (1996-02-01), None
patent: 9-82650 (1997-03-01), None
patent: 10-223719 (1998-08-01), None
patent: 2001-82682 (2001-03-01), None
patent: 2001-261375 (2001-09-01), None
U.S. Appl. No. 10/082,599, filed Feb. 22, 2002, Carpenter et al.
U.S. Appl. No. 10/132,003, filed Apr. 24, 2003, Dando et al.
U.S. Appl. No. 10/365,085, filed Feb. 11, 2003, Carpenter et al.
U.S. Appl. No. 60/311,064, filed Aug. 8, 2001, naming Fangli Hao as inventor, and titledDesign for Symmetrical Chamber Compensator With Two Degrees of Freedmon Without Adding Acutator, 8 pages. no pub. date.

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