Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2008-05-06
2008-05-06
Ahmed, Shamim (Department: 1792)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S675000, C438S760000, C438S618000, C438S637000, C216S037000, C216S058000, C216S067000, C216S078000, C216S081000, C216S098000
Reexamination Certificate
active
07368393
ABSTRACT:
A method for removing damages of a dual damascene structure after plasma etching is disclosed. The method comprises the use of sublimation processes to deposit reactive material onto the damaged regions and conditions to achieve a controlled removal of the damaged region. Furthermore a semiconductor structure comprising a dual damascene structure that has been treated by the method is disclosed.
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America William G.
Johnston Steven H.
Messenger Brian W.
Ahmed Shamim
Angadi Maki
Greenblum & Bernstein P.L.C.
International Business Machines - Corporation
Yaghmour Rosa Suazo
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