Chemical mechanical polishing methods utilizing pH-adjusted poli

Details Chemical mechanical polishing methods utilizing pH-adjusted poli Chemical mechanical polishing methods utilizing pH-adjusted poli

1998-01-21

2000-06-27

Whitehead, Jr., Carl

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

438690, 438691, 438693, 216887, 216 89, H01L 21302

Patent

active

060806737

ABSTRACT:
Methods for manufacturing microelectronic using chemical mechanical polishing (CMP) comprises providing wafers wetted with deionized water mixtures having first pHs, and performing CMP on the wetted wafers while applying polishing slurries having second pHs thereto. In accordance with the invention, the first pHs are substantially equal to the second pHs.

REFERENCES:
patent: 5320706 (1994-06-01), Blackwell
patent: 5407526 (1995-04-01), Danielson et al.
patent: 5597443 (1997-01-01), Hempel
patent: 5643406 (1997-07-01), Shimomura et al.
patent: 5769689 (1998-06-01), Cossaboon et al.
Ali et al.; The Effect of Secondary Platen Downforce on Post-Chemical Mechanical Planarization Cleaning; Microcontamination Conference Proceedings; (1994); pp. 196-205.

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