Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2011-07-19
2011-07-19
Tran, Thien F (Department: 2895)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S633000, C438S634000, C438S682000, C438S740000, C438S926000
Reexamination Certificate
active
07981801
ABSTRACT:
A method for fabricating a semiconductor device is provided which includes providing a semiconductor substrate, forming a plurality of transistors, each transistor having a dummy gate structure, forming a contact etch stop layer (CESL) over the substrate including the dummy gate structures, forming a first dielectric layer to fill in a portion of each region between adjacent dummy gate structures, forming a chemical mechanical polishing (CMP) stop layer over the CESL and first dielectric layer, forming a second dielectric layer over the CMP stop layer, performing a CMP on the second dielectric layer that substantially stops at the CMP stop layer, and performing an overpolishing to expose the dummy gate structure.
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Chinese Patent Office, Office Action dated Oct. 12, 2010, Application No. 200910169147.2, 5 pages.
Chuang Harry
Lai Su-Chen
Shen Gary
Thei Kong-Beng
Haynes and Boone LLP
Taiwan Semiconductor Manufacturing Company , Ltd.
Tran Thien F
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