Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Multiple layers
Reexamination Certificate
2006-01-31
2006-01-31
Thompson, Craig A. (Department: 2813)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Multiple layers
Reexamination Certificate
active
06992018
ABSTRACT:
Methods are described for depositing a film or discontinuous layer of discrete clusters, of material (e.g., metals, metal mixtures or alloys, metal oxides, or semiconductors) on the surface of a substrate, e.g., a patterned silicon wafer, by i) dissolving a precursor of the material into a supercritical or near-supercritical solvent to form a supercritical or near-supercritical solution; ii) exposing the substrate to the solution, under conditions at which the precursor is stable in the solution; and iii) mixing a reaction reagent into the solution under conditions that initiate a chemical reaction involving the precursor, thereby depositing the material onto the solid substrate, while maintaining supercritical or near-supercritical conditions. The invention also includes similar methods for depositing material particles into porous solids, and films of materials on substrates or porous solids having material particles deposited in them. The invention also covers methods of preparing a plated substrate by depositing a catalytic layer followed by a plating layer.
REFERENCES:
patent: 3699408 (1972-10-01), Shinoda et al.
patent: 4552786 (1985-11-01), Berneburg et al.
patent: 4582731 (1986-04-01), Smith
patent: 4734227 (1988-03-01), Smith
patent: 4737384 (1988-04-01), Murthy et al.
patent: 4970093 (1990-11-01), Sievers et al.
patent: 5403621 (1995-04-01), Jackson et al.
patent: 5789027 (1998-08-01), Watkins et al.
patent: 0881673 (1998-02-01), None
patent: 0 881 673 (1998-12-01), None
patent: 0 881 673 (1998-12-01), None
International Search Report; International Application No.: PCT/US 00/30264; Applicant: University of Massachusetts et al.
B.M Hybertson et al., “Deposition of Palladium Films by a Novel supercritical Fluid Transport Chemical Deposition Process”, Mat. Res. Bull., Vo. 26, pp. 1127-1133, 1991.
B. Hansen et al., “Supercritical Fluid Transport-Chemical Deposition of Films”, Chem. Mater., vol. 4, 749-752, 1992.
J.F. Bocquet et al., A New TiO2Film Deposition Process in a Supercritical Fluid, Surface and Coatings Technology, 70 p. 73-78, 1994.
M.J. Hampden-Smith et al., “Chemical Vapor Deposition of Metals: Part 1. An Overview of CVD Processes”, Chem. Vap. Deposition vol. 1, 8-23, 1995.
O.A. Louchev et al., “The Morphological Stability in Supercritical Fluid Chemical Deposition of Films Near the Critical Point”, Journal of Crystal Growth 155, p. 276-285, 1995.
J.J. Watkins et al., “Polymer/Metal Nanocomposite Synthesis in Supercritical CO2”, Chemistry of Materials, vol. 7, No. 11, 1995.
Blackburn Jason M.
Lazorcik Jason L.
Long David P.
Watkins James J.
Fish & Richardson P.C.
Thompson Craig A.
University of Massachusetts
LandOfFree
Chemical fluid deposition for the formation of metal and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Chemical fluid deposition for the formation of metal and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Chemical fluid deposition for the formation of metal and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3531961