CMOS-type photodetector for improved charge transfer from...

Radiant energy – Photocells; circuits and apparatus – Photocell controlled circuit

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S292000

Reexamination Certificate

active

06984817

ABSTRACT:
A photodetector formed in an active area of a semiconductor substrate of a first conductivity type, including a MOS transistor and a photodiode formed of the junction between the substrate and a region of a second conductivity type also forming the source of the MOS transistor, a heavily-doped layer of the first conductivity type covering the source region and a portion of the substrate, said portion of the substrate being delimited by an opening of the source region extending in a centered manner from the side of the source region opposite to the channel region of the transistor, towards this channel region.

REFERENCES:
patent: 4242694 (1980-12-01), Koike et al.
patent: 4407010 (1983-09-01), Baji et al.
patent: 4630091 (1986-12-01), Kuroda et al.
patent: 4996578 (1991-02-01), Motojima et al.
patent: 5084747 (1992-01-01), Miyawaki
patent: 5191399 (1993-03-01), Maegawa et al.
patent: 5237185 (1993-08-01), Udagawa et al.
patent: 5268309 (1993-12-01), Mizutani et al.
patent: 5306931 (1994-04-01), Stevens
patent: 5330933 (1994-07-01), Chan et al.
patent: 5345266 (1994-09-01), Denyer
patent: 5502488 (1996-03-01), Nagasaki et al.
patent: 5591997 (1997-01-01), Guidash et al.
patent: 5614744 (1997-03-01), Merrill
patent: 5621230 (1997-04-01), Guidash et al.
patent: 5747835 (1998-05-01), Pezzani
patent: 5831326 (1998-11-01), Chan et al.
patent: 5859462 (1999-01-01), Tredwell et al.
patent: 5881184 (1999-03-01), Guidash
patent: 5903021 (1999-05-01), Lee et al.
patent: 5926214 (1999-07-01), Denyer et al.
patent: 5945722 (1999-08-01), Tsuei et al.
patent: 5949061 (1999-09-01), Guidash et al.
patent: 5978025 (1999-11-01), Tomasini et al.
patent: 5981932 (1999-11-01), Guerrieri et al.
patent: 5982011 (1999-11-01), Kalnitsky et al.
patent: 5986297 (1999-11-01), Guidash et al.
patent: 6019848 (2000-02-01), Frankel et al.
patent: 6049118 (2000-04-01), Nagano
patent: 6051447 (2000-04-01), Lee et al.
patent: 6067113 (2000-05-01), Hurwitz et al.
patent: 6069377 (2000-05-01), Prentice et al.
patent: 6087703 (2000-07-01), Ohta et al.
patent: 6100551 (2000-08-01), Lee et al.
patent: 6100556 (2000-08-01), Drowley et al.
patent: 6107655 (2000-08-01), Guidash
patent: 6127697 (2000-10-01), Guidash
patent: 6133954 (2000-10-01), Jie et al.
patent: 6150683 (2000-11-01), Merrill et al.
patent: 6160281 (2000-12-01), Guidash
patent: 6160282 (2000-12-01), Merrill
patent: 6188056 (2001-02-01), Kalnitsky et al.
patent: 6218210 (2001-04-01), Park
patent: 6218656 (2001-04-01), Guidash
patent: 6259124 (2001-07-01), Guidash
patent: 6352876 (2002-03-01), Bordogna et al.
patent: 6380572 (2002-04-01), Pain et al.
patent: 6504195 (2003-01-01), Guidash
patent: 2001/0045580 (2001-11-01), Descure
patent: 2002/0011638 (2002-01-01), Bordogna et al.
patent: 2002/0019070 (2002-02-01), Laurin et al.
patent: 2002/0030753 (2002-03-01), Kramer et al.
patent: 2002/0051067 (2002-05-01), Henderson et al.
patent: 0 152 353 (1985-08-01), None
patent: 0 223 136 (1987-05-01), None
patent: 1 207 686 (2002-05-01), None
patent: 2 276 512 (1994-09-01), None
patent: WO 92/15036 (1992-09-01), None
patent: WO 92/16999 (1992-10-01), None
patent: WO 93/04556 (1993-03-01), None
patent: WO 97/20434 (1997-06-01), None
patent: WO 97/35438 (1997-09-01), None
patent: WO 98/49729 (1998-11-01), None
patent: WO 99/57887 (1999-11-01), None
patent: WO 00 52765 (2000-09-01), None
French Search Report from French Patent Application 01/06132, filed May 9, 2001.
Patent Abstracts of Japan, vol. 009, No. 061 (E-303), Mar. 19, 1985 & JP 59 198756 A (Hitachi Seisakusho KK), Nov. 10, 1984.
Patent Abstracts of Japan, vol. 2000, No. 11, Jan. 2, 2001 & JP 2000 236081 A (Nikon Corp.) Aug. 29, 2000.
Patent Abstracts of Japan, vol. 1998, No. 03, Feb. 27, 1998 & JP 09 289301 A (Nikon Corp.) Nov. 4, 1997.
Patent Abstracts of Japan, vol. 009, No. 262 (P-398), Oct. 19, 1985 & JP-A-60 111225 (Matsushita Denki Sangyo KK).
Patent Abstracts of Japan, vol. 1998, No. 09, Jul. 31, 1998 & JP 10 098175 A (Toshiba Corp.).
Furumiya M. et al., “High Sensitivity and No-Cross-Talk Pixel Technology For Embedded CMOS Image Sensor” International Electron Devices Meeting 2000. IEDM. Technical Digest, San Francisco, CA, Dec. 10-13, 2000, New York, NY: IEEE, US, Dec. 10, 2000, pp. 701-704.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

CMOS-type photodetector for improved charge transfer from... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with CMOS-type photodetector for improved charge transfer from..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and CMOS-type photodetector for improved charge transfer from... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3531960

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.