Charge trapping dielectric structures with variable band-gaps

Details Charge trapping dielectric structures with variable band-gaps Charge trapping dielectric structures with variable band-gaps

2006-10-30

2011-12-13

Nguyen, Khiem D (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S287000, C438S591000, C257S324000, C257SE21423, C257SE21679

Reexamination Certificate

active

08076200

ABSTRACT:
A nonvolatile read-only memory having a thin nitrided tunnel insulator surface with a charge blocking insulator over the nitrided surface is presented. The tunnel insulator may be formed of a metal oxide, a metal oxycarbide, a semiconductor oxide, or oxycarbide. The dielectric structure may be formed by nitridation of a surface of a tunnel insulator using ammonia and deposition of a blocking insulator having a larger band gap than the tunnel insulator. The dielectric structure may form part of a memory device, as well as other devices and systems.

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