Charge trap flash memory device, fabrication method thereof,...

Details Charge trap flash memory device, fabrication method thereof,... Charge trap flash memory device, fabrication method thereof,...

2006-10-13

2009-11-10

Dang, Phuc T (Department: 2892)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S197000, C438S264000, C257S314000, C257S315000

Reexamination Certificate

active

07615446

ABSTRACT:
In one aspect, a charge trap flash memory device is provided which includes a semiconductor substrate, source and drain regions which are spaced apart in an active region of the semiconductor substrate to define a channel region therebetween, a tunneling dielectric layer located on the channel region, an organic polymer thin film located on the tunneling dielectric layer, metal or metal oxide nano-crystals embedded in the organic polymer thin film, and a gate located on the organic polymer thin film.

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